輔仁大學
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學校名稱輔仁大學
系所名稱物理學系
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學號486326169
研究生(中)陳彥奇
研究生(英)Yen-Chi Chen
論文名稱(中)反應式磁控濺鍍系統沉積非晶相矽碳氮薄膜與其場發射性質的研究
論文名稱(英)Reactive Magnetron Sputtering Deposition and Field Emission of a-SiCN Films
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指導教授(中)華魯根 陳貴賢 林麗瓊
指導教授(英)Luu-Gen Hwa Kuei-Hsien Chen Li-Chyong Chen
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學位類別碩士
畢業學年度88
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關鍵字(中)場發射 矽碳氮薄膜 非晶碳膜 氧化銦錫玻璃 邊緣效應 穩定度
關鍵字(英)field emission silicon carbon nitride thin film amorphous carbon film ITO glass edge effect stability
摘要(中)本實驗利用反應式磁控濺鍍系統, 以碳化矽為靶材在不同的反應氣氛下沉積非晶相的矽碳氮薄膜, 作為場發射顯示器的陰極材料。 利用在反應氣體中摻入少許甲烷, 使得薄膜表面粗糙度由原先的奈米等級改變成次微米級, 此變化增強了場發射效應中的幾何因子, 讓電子更容易從薄膜表面發射出。 藉著掃描式電子顯微鏡觀察薄膜表面形貌與估算薄膜沉積速率約為1μm/ hr; 穿透式電子顯微鏡判斷其並不具結晶性; 歐傑電子能譜對組成元素做定性與定量分析, 發現隨著反應氣氛中甲烷含量的增加, 薄膜組成由矽碳氮薄膜轉變成以碳為基底摻雜矽與氮的薄膜; 化學分析電子能譜與傅立葉轉換紅外光譜分析鍵結型態; 顯微拉曼觀察短程有序的石墨結構, 發現隨著在反應氣氛中甲烷含量的增加, 光譜中的G譜峰位置有朝向長波數位移, 其半高寬亦有變窄的趨勢, 這代表單位體積內短程有序的石墨數目增加了。 在真空下, 利用平行電板的方式量測薄膜場發射特性, 並對場發射的電性量測上做適當的改良, 將石墨電極換成刮有圖案的氧化銦錫玻璃(ITO pattern), 以利觀察薄膜場發射的均勻性與阻絕薄膜邊緣效應的電流貢獻。 並在不同的測試條件下, 觀察薄膜場發射特性的變化與穩定性。 具有最加場發射特性的薄膜其實驗參數在基板溫度為1000oC, 反應氣氛(甲烷佔氮氣的比例)為0.2的條件下, 以60瓦高週波成長30分鐘, 所合成出的a-C:Si,N薄膜。 此薄膜的起始電場【註】為9.4V/μm, 且在長時間電場操作下的穩定性亦優於以純氬氣所沉積的a-C:Si薄膜。 註: 定義為薄膜場發射電流密度達到10μA/cm2時所需的外加電場(EJ10)
摘要(英)In this thesis, I studied the growth of amorphous SiCN films utilizing reactive magnetron sputtering and applied it for field emission material. In the deposition process, methane was introduced, which significantly roughen the surface from the original nanometer scale roughness to submicron roughness, which significantly enhanced the geometrical enhancement factor and promoted the electron emission. The deposition rate is about 1μm/hr, which is determined by SEM cross-section image. The compositions study determined by AES shows that carbon dominates the film at high CH4 content. ESCA and FTIR were further applies to study the bounding state of each components. Micro-Raman study also shows blueshift and narrowing of the G band at higher CH4 content, indicating increasing of short-range order graphitic phase. Field emission measurements have been performed in vacuum, using parallel arrangement of anode and cathode. In the present work, we replaced the graphite electrode by ITO pattern electrode, in order to check not only the uniform emission from the cathode but also avoid the emission current from the edge of cathode. The lowest turn on field for a-C:Si,N was found to be 9.4V/μm. Emission stability have been invested at different condition and it is observed that the emission stability of a-C:Si,N for longer duration is better than a-C:Si deposited by argon gas.
論文目次目錄 第一章 序論……………………………………………………………...1 第二章 場發射基本理論與文獻回顧………………………….……..…4 2-1場發射的基本理論 ..……………………………………….….…..4 2-2文獻回顧 : 發展中的陰極材料與二極式場發射電流的量測方法.9 2-2-1 鑽石薄膜, 類鑽薄膜與非晶碳 ..………………………….9 2-2-2 N-type 摻雜的碳膜 .………………………….…….………12 2-2-3 非晶碳化矽(a-SiC)薄膜與非晶矽碳氮薄膜(a-SiCN) ..……12 2-2-4 二極式場發射電流的量測方法 ..…………………….…….…13 2-3 研究動機 …………………………………………………..….15 第三章 實驗方法與步驟………………………………………………..16 3-1 實驗系統……………………………………………………….…16 3-1-1 實驗裝置………………………………………………….…16 3-1-2 濺鍍原理………………………………………………….…16 3-2 實驗設計……………………………………………………….…22 3-2-1 基板清洗………………………………………………….…22 3-2-2 實驗的參數………………………………………………….22 3-3 薄膜特性分析 …………………………………………………..22 3-3-1 掃描式電子顯微鏡 ………………………………………… 22 3-3-2 穿透式電子顯微鏡 .…………………………………………24 3-3-3 歐傑電子能儀……………………………………………..24 3-3-4 化學分析電子儀....…………………………………………..25 3-3-5 傅立葉轉換紅外光譜.….………………………………….…25 3-3-6 顯微拉曼光譜………………………………………………..26 3-3-7 場發射電性量測 .…………………………………………...27 第四章 實驗結果與討論 ………………………………………………29 4-1 成長參數對薄膜特性的影響……………………………………….29 4-1-1 不同成長氣氛對表面形貌及沉積型式的影響………………….29 4-1-2 薄膜成份、結構與鍵結型態分析……………………………..33 4-2 場發射電流量測的改進與量測結…..………………………………43 4-2-1 不同的場發射量測方式及所觀察到的現象………………….43 4-2-2 場發射電性量測……………………………………………..44 4-2-3 拉曼光譜中的sp3與sp2和場發射的關係……………………..55 4-2-4 場發射效能隨時間穩定性的探討……………………………...59 4-2-5 其他類型薄膜的場發射效能及其穩定度分析…………………..62 第五章 結論 ..…………………………………………………………..69 參考文獻
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